AlN grown by CBE for power device applications
نویسندگان
چکیده
منابع مشابه
Structural and Spectroscopic Properties of AlN Layers Grown by MOVPE
The effects on surface morphology, crystal quality, and growth rate of undoped AlN layers grown on c-plane sapphire substrates due to the changes in growth parameters, such as V-III ratio, N2-H2 ratio, and growth temperature in LP-MOVPE are studied here. The optimized growth process resulted in an almost flat surface morphology with a significantly reduced number of hexagonal pits (3 · 10 cm−2)...
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We measured the ellipsometric response from 0.7-5.4 eV of c-axis oriented AlN on Si (111) grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN the refractive index is about 5-10% lower than in bulk AlN single crystals. Most likely, this discrepancy is due to a low film density (compared to bulk AlN), based on measurements using Rutherford backscattering. ...
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AlxGa1 xN/AlN multiple quantum wells (MQWs) structures were grown by metalorganic vapour phase epitaxy (MOVPE) on pseudo AlN substrates using nitrogen as a carrier gas. Results of X-ray diffraction (XRD) and reciprocal space mapping (RSM) indicated no sign of strain relaxation in the quantum wells with respect to the AlN substrate. The MQW parameters such as thicknesses, growth rates and materi...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2020
ISSN: 2158-3226
DOI: 10.1063/1.5142615